wtpb1 wtpb1 wtpb1 wtpb1 2 2 2 2 a60 a60 a60 a60 b b b b w w w w r e v . a apr .2 0 11 t03-3 c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . sensitive sensitive sensitive sensitive gate gate gate gate bi-directional bi-directional bi-directional bi-directional t t t t riode riode riode riode t t t t hyristor hyristor hyristor hyristor featur featur featur featur e e e e s s s s rep e titive peak off-state v oltage: 60 0 v r.m.s on-state current(i t(rms ) = 1 2a low on-state voltag e : v tm =1.55v(ma x .)@ i t = 1 7a high commutation dv/dt. halogen free (WTPB12A60BW-hf) gener gener gener gener a a a a l l l l de de de de s s s s cription cription cription cription gener a l purp o se s w i thhi n g and ph a se control app l icati o ns. these dev i ces are inte n d e d to b e interfac e d d irectly to micro-c o ntrol l ers, log i c inte g rated circuits and other low pow e r gate trigg e r circu i ts such a s fan spe e d and temper a ture mod u lati o n contro l , li g hting con t rol and static s w i tching rel a y . absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings (tj=25 unl e ss o ther w is e spec i fied) symbol parameter v alue units v drm /v prm peak repetitive forw a rd blocking v o ltage(g a te open) (note 1) 600 v i t ( rms) forw a rd cur r ent rms (all conduction angles, t j =5 8 ) 1 2 a i tsm peak forw a rd surge cur r ent, ( full cycle, sine wave, 50/60 hz) 1 2 0 /126 a i 2 t circuit fusing considerations (tp= 10 ms) 100 a 2 s p gm peak gate power forw a rd, (tj = 5 8 c,pulse wit h 1.0us) 5 w p g( a v ) average gate power forw a rd, (over any 20ms period) 1 w di/dt critical rate of rise of on-state c urrent i t m = 20a; i g = 2 0 0m a ; di g /dt = 200ma / s t j = 12 5 50 a / s i fgm peak gate curr e nt forw a rd, t j = 12 5 c (20 s, 120 pps) 4 a v rgm peak gate voltage reverse, t j = 125 c (20 s , 120 pps) 10 v t j, junction t e mperatu r e -40~125 t stg storage t e mperatu r e -40~150 no no no no te1 te1 te1 te1 : : : : .alth o u g h n ot r e c o mm en d e d , o f f - s t a te v o lta g es u p to 8 0 0 v m a y b e a p p l i e d wit h o u t da ma g e, bu t t h e triac m a y s w i t j h t o t h e on - s t at e . t h e r a t e o f r i s e o f cu r r e n t s h o u l d no t e x ce e d 1 5 a/ us. thermal thermal thermal thermal char char char char a a a a cte cte cte cte r r r r istics istics istics istics symbol parameter v a lue units min t y p max r qjc therm a l resistance, junction-to-case - - 1.4 /w r qja therm a l resistance, junction-to-ambient - - 60 /w
wtpb wtpb wtpb wtpb 12 12 12 12 a a a a 6 6 6 6 0 0 0 0 b b b b w w w w 2/ 6 symbol ch a ra c teri st ics min typ. max unit i dr m / / i rrm peak f o r w ar d o r rev e rse block i ng curr e nt ( v dr m =v rr m, ) t j = 2 5 - - 5 a t = 12 5 - - 1 ma v tm f o r w a rd on volta g e (note 2 ) ( i tm = 1 7 a tp=38 0 s) - - 1.55 v i gt gate trigg e r curr e nt (co n tinu o us dc) (v d = 1 2 v d c, r l = 3 3 ? ) t 2 +g+ t 2 +g- t 2 -g- - - - - - - 50 5 0 5 0 ma v gt gate trigg e r volta g e (co n tinu o us dc) (v d = 1 2 v d c, r l = 3 3 ? ) t 2 +g+ t 2 +g- t 2 -g- - - - - - - 1.2 1.2 1.2 v v gd gate threshold voltage( v d = v dr m , rl = 3 .3 k ? , t j = 12 5 ,) 0.2 - - v dv/dt critical rate o f rise o f commutation voltage (v d = 0 .67v dr m ) 4 0 - - v / s i h holding current (i t = 500 ma) (note 3) - - 2 5 ma i l latching c urrent ( v d = 1 2 v d c, i g t = 0 . 1 a) t 2 +g+ t 2 +g- t 2 -g- - - - - - - 40 70 40 ma r d d y namic resistance - - 3 5 m ? steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical electrical electrical electrical chara chara chara chara c c c c teristics teristics teristics teristics ( t j = 2 5 c unless otherwise spec i fie d ) j n o te 2. f o r w ard c u rr e nt ap p li e d for 1 ms ma x imum du r a t io n , d u ty c y cle n o te 3 . f o r bo t h p o l a ri t i e s o f a2 to a1
wtpb1 wtpb1 wtpb1 wtpb1 2 2 2 2 a60 a60 a60 a60 b b b b w w w w 3 / 6 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fi fi fi fi g. g. g. g. 1 1 1 1 fi fi fi fi g. g. g. g. 2 2 2 2 fi fi fi fi g. g. g. g. 3 3 3 3 fi fi fi fi g. g. g. g. 4 4 4 4 fi fi fi fi g. g. g. g. 5 5 5 5 fi fi fi fi g. g. g. g. 6 6 6 6
wtpb wtpb wtpb wtpb 12 12 12 12 a a a a 6 6 6 6 0 0 0 0 b b b b w w w w 4 / 6 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig fig fig fig . . . . 7 7 7 7 fi fi fi fi g. g. g. g. 8 8 8 8 fi fi fi fi g. g. g. g. 9 9 9 9 fi fi fi fi g. g. g. g. 10 10 10 10 g g g g a a a a te te te te t t t t r r r r i i i i gg gg gg gg e e e e r r r r ch ch ch ch a a a a ra ra ra ra c c c c t t t t e e e e r r r r i i i i s s s s ti ti ti ti c c c c s s s s t t t t e e e e s s s s t t t t cir cir cir cir c c c c uit uit uit uit
5 / 6 wtpb wtpb wtpb wtpb 1 1 1 1 2 2 2 2 a60 a60 a60 a60 b b b b w w w w steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance marking marking marking marking layout layout layout layout part part part part no. no. no. no. - : winsemi semiconductor logo b : igt ? : w: the third quadrant null : the fourth quadrant ww : weekly code (01-52) yy : last two digit of calendar year (1 1 :201 1 ;1 2 :201 2 ) : hf halogen free null halogen b b b b ? ? ? ? wwyy wwyy wwyy wwyy
wtpb wtpb wtpb wtpb 1 1 1 1 2 2 2 2 a60 a60 a60 a60 b b b b w w w w 6 / 6 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance t t t t o o o o - - - - 220 220 220 220 package package package package d d d d imension imension imension imension unit: unit: unit: unit: mm mm mm mm
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